leshan radio company, ltd. lmbt3906tt1g sc-89 maximum ratings rating symbol value unit collector?emitter voltage v ceo ? 40 vdc collector?base voltage v cbo ? 40 vdc emitter?base voltage v ebo ? 5.0 vdc collector current ? continuous i c ? 200 madc thermal characteristics characteristic symbol ma x unit total device dissipation fr? 4 board(1) p d 200 mw t a =25 c derate above 25c 1.6 mw/c thermal resistance junction to ambient r ja 600 c/w total device dissipation p d 300 mw fr-4 board (2), t a = 25c derate above 25c 2.4 mw/c thermal resistance junction to ambient r ja 400 c/w junction and storage temperature t j , t stg ?55 to +150 c device marking lmbt3906tt1g = 2a electrical characteristics (t a =2 5 c unless otherwise noted) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage (3) v (br)ceo vdc (i c = ?1.0 madc, i b = 0) ? 40 ? collector?base breakdown voltage v (br)cbo vdc (i c = ?10 adc, i e = 0) ? 40 ? emitter?base breakdown voltage v (br)ebo vdc (i e = ?10 adc, i c = 0) ? 5.0 ? base cutoff current i bl nadc (v ce = ?30 vdc, v eb = ?3.0 vdc) ? ? 50 collector cutoff current i cex nadc (v ce = ?30 vdc, v eb = ?3.0 vdc) ? ? 50 1. fr-4 minimum pad. 2. fr-4 1.0 x 1.0 inch pad. general purpose transistors pnp silicon 2 emitter 3 collector 1 base 3. pulse width < 300 s; duty cycle < 2.0%. feature ? simplifies circuit design. ? device marking shipping lmbt3906tt1g 2a 3000/tape & reel lmbt3906tt3g 2a 10000/tape & reel ordering information compliance with we declare that the material of product rohs requirements. rev.o 1/6 s-lmbt3906tt1g ? s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. s-lmbt3906tt1g 2a s-lmbt3906tt3g 2a
leshan radio company, ltd. lmbt3906tt1g electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics (3) dc current gain h fe ?? (i c = ?0.1 madc, v ce = ?1.0 vdc) 60 ?? (i c = ?1.0 madc, v ce = ?1.0 vdc) 80 ?? (i c = ?10 madc, v ce = ?1.0 vdc) 100 300 (i c = ?50 madc, v ce = ?1.0 vdc) 60 ?? (i c = ?100 madc, v ce = ?1.0 vdc) 30 ?? collector?emitter saturation voltage v ce(sat) vdc (i c = ?10 madc, i b = ?1.0 madc) ?? ? 0.25 (i c = ?50 madc, i b = ?5.0 madc) ?? ? 0.4 base?emitter saturation voltage v be(sat) vdc (i c = ?10 madc, i b = ?1.0 madc) ? 0.65 ? 0.85 (i c = ?50 madc, i b = ?5.0 madc) ?? ? 0.95 small?signal characteristics current?gain ? bandwidth product f t mhz (i c = ?10 madc, v ce = ?20 vdc, f = 100 mhz) 250 ?? output capacitance c obo pf (v cb = ?5.0 vdc, i e = 0, f = 1.0 mhz) ?? 4.5 input capacitance c ibo pf (v eb = ?0.5 vdc, i c = 0, f = 1.0 mhz) ?? 1 0 input impedance h ie k (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) 2.0 12 voltage feedback ratio h re x 10 ?4 (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) 0.1 10 small?signal current gain h fe ? (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) 100 400 output admittance * h oe mhos (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) 3.0 60 noise figure nf db (v ce = ?5.0vdc, i c = ?100 adc, r s =1.0 k , f =1.0khz) ?? 4.0 switching characteristics delay time (v cc = ? 3.0 vdc, v be = 0.5 vdc, t d ?35 rise time i c = ?10 madc, i b1 = ?1.0 madc) t d ?35ns storage time (v cc = ?3.0 vdc, i c = ?10 madc, t s ? 225 ns fall time i b1 = i b2 = ?1.0 madc) t f ?75 3. pulse test: pulse width < 300 s; duty cycle < 2.0%. rev.o 2/6 ;s-lmbt3906tt1g
leshan radio company, ltd. figure 1. delay and rise time equivalent test circuit *total shunt capacitance of test jig and connectors 10 k 3 v 275 c s < 4.0 pf* 10 k 3 v 275 c s < 4.0 pf* 1n916 + 0.5 v 10 < t 1 < 500 s duty cycle = 2% 10.9 v <1ns <1 ns ? 10.6 v t 1 + 9.1 v 0 figure 2. storage and fall time equivalent test circuit 300ns duty cycle = 2% typical transient characteristics i c , collector current (ma) figure 4. charge data reverse bias (volts) figure 3. capacitance v cc = 40 v i c / i b = 10 q t t j = 25c t j = 125c c obo c ibo q a 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 10.0 7.0 5.0 3.0 2.0 1.0 5000 3000 2000 1000 700 500 300 200 100 70 50 q, charge (pc) capacitance (pf) i c , collector current (ma) figure 6. fall time i c , collector current (ma) figure 5. turn?on time time (ns) t r , fall time (ns) v cc = 40 v i b1 = i b2 t r @v cc =3.0v 40 v i c /i b = 10 t d @v ob =0v 2.0 v 15 v 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 500 300 200 100 70 50 30 20 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 500 300 200 100 70 50 30 20 10 7 5 i c /i b = 10 i c /i b = 20 0 rev.o 3/6 lmbt3906tt1g ;s-lmbt3906tt1g
leshan radio company, ltd. source resistance= 200 ? i c = 1.0 ma typical audio small?signal characteristics noise figure variations (v ce = ? 5.0 vdc, t a = 25c, bandwidth = 1.0 hz) f, frequency (khz) figure 7. noise figure r g , source resistance (k ? ) figure 8. noise figure nf, noise figure (db) nf, noise figure (db) f = 1.0 khz i c = 0.5 ma source resistance =1.0k ? i c = 50 a source resistance= 500 ? i c = 100 a source resistance= 200 ? i c = 0.5 ma i c = 1.0 ma i c = 100 a i c = 50 a 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 12 10 8 6 4 2 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 14 12 10 8 6 4 2 0 h re , voltage feedback ratio (x 10 ?4 ) h parameters (v ce = 10 vdc, f = 1.0 khz, t a = 25c) i c , collector current (ma) figure 9. current gain i c , collector current (ma) figure 10. output admittance i c , collector current (ma) figure 11. input impedance i c , collector current (ma) figure 12. voltage feedback ratio h fe , dc current gain h oe , output admittance ( mhos) h ie , input impedance (k ? ) 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 300 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 10 5.0 2.0 1.0 0.5 0.2 100 50 20 10 5 2 1 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 rev.o 4/6 lmbt3906tt1g ;s-lmbt3906tt1g
leshan radio company, ltd. i b , base current (ma) figure 14. collector saturation region figure 13. dc current gain i c , collector current (ma) figure 16. temperature coefficients c , collector current (ma) figure 15. ?on? voltages v ce , collector emitter voltage (volts) v, voltage ( volts ) coefficient (mv/ c) i c =1.0 ma t j = 25c +25c to +125c vc for v ce(sat) 10 ma t j = 25c 30 ma 100 ma v be(sat) @ i c /i b =10 v ce(sat) @ i c /i b =10 v be @ v ce =1.0 v ?55c to +25c +25c to +125c ?55c to +25c vb for v be(sat) 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 1.0 0.8 0.6 0.4 0.2 0 1.0 2.0 5.0 10 20 50 100 200 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 180 200 1.0 0.5 0 ? 0.5 ?1.0 ?1.5 ?2.0 typical static characteristics i c , collector current (ma) 100 1000 10 1.0 t j = 150 c 25 c -55 c h fe , dc current gain 10 100 1000 v ce = 1 v rev.o 5/6 lmbt3906tt1g ;s-lmbt3906tt1g
leshan radio company, ltd. g m 0.08 (0.003) x d 3 pl j -x- -y- notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 463c-01 obsolete, new standard 463c-02. a b y 12 3 n 2 pl k c -t- seating plane dim a min nom min nom inches 1.50 1.60 1.70 0.059 millimeters b 0.75 0.85 0.95 0.030 c 0.60 0.70 0.80 0.024 d 0.23 0.28 0.33 0.009 g 0.50 bsc h 0.53 ref j 0.10 0.15 0.20 0.004 k 0.30 0.40 0.50 0.012 l 1.10 ref m ??? ??? 10 ??? n ??? ??? 10 ??? s 1.50 1.60 1.70 0.059 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013 0.020 bsc 0.021 ref 0.006 0.008 0.016 0.020 0.043 ref ??? 10 ??? 10 0.063 0.067 max max m h h l g recommended pattern of solder pads s sc - 8 9 rev.o 6/6 lmbt3906tt1g ;s-lmbt3906tt1g
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